| 摘要 |
PURPOSE:To enable the use of the titled device as the light source of a photo IC having photo elements integrated monolithically by a method wherein an optical waveguide and a reverse mesa type resonator are formed on a semiconductor substrate having a ridge, and laser beams are led out through the optical waveguide. CONSTITUTION:An N type Ga0.7Al0.3As clad layer 2, N type Na0.92Al0.08As optical waveguide layer 3, N type Ga0.7Al0.3 clad layer 4, a Ga0.95Al0.05As active layer 5, a P type Ga0.7Al0.3As clad layer 6, and an N type GaAs layer 7 are grown on the N type GaAs substrate 1 having the ridge 1' by the liquid epitaxial growing method, resulting in the formation of a double hetero structure. A P<+> region 12 is formed by stripe-form Zn diffusion from the surface. CrAu is evaporated and turned to a positive electrode 9, parts 11 being cut down by chemical etching into the reverse mesa type resonator, and AuGeNi being then evaporated and turned to a negative electrode 8. Laser oscillation takes place in an active layer 5, and the laser beam is led out through the optical waveguide layer constituting a directive coupler. |
