| 摘要 |
PURPOSE:To reduce the process and obtain good characteristics by a method wherein an oxidation resistant insulation film constituting part of a gate insulation film is made as a mask in forming a field oxide film for element isolation. CONSTITUTION:A required pattern is formed after an Si oxide film 22, an Si nitride film 23, and a photo resist layer 24 are successively formed on a substrate 21. The Si nitride film 23 is selectively removed, and a field inversion preventing layer 25 is formed by phosphorus implantation to the substrate. A field oxide film 26 is grown by thermal oxidation with this Si film as an oxidation resistant mask. A channel ion implanted layer 27 is formed by removal of the Si films 23 and 22 and then by phosphorus implantation. A polycrystalline Si layer 28 serving as the electrode and a photo resist layer 29 are formed and patterned. After only the source and drain regions of the substrate are exposed, the source and drain regions 30 are formed by phosphorus implantation, and the photo resist layer is removed. Finally, an inter-layer insulation film 31 is formed, and a contact hole is formed; thereafter Al wirings 32 and a passivation film 33 are formed. |
