| 摘要 |
PURPOSE:To increase the resolution by forming a high-accurate pattern by a method wherein a transfer gate region is formed by self-alignment with a photoelectric conversion region and a shift resistor region. CONSTITUTION:A high concentration diffusion 2 for channel stopping and a thick insulation oxide film 3 are formed in the inactive region on a semiconductor substrate 1, and a thin insulation oxide film 4 is formed in the active region. Next, a polycrystalline Si layer 5 serving as an electrode and containing a high concentration impurity and an insulation oxide film 6 in contact with it are formed over the entire surface; thereafter, they are selectively etched with a photo resistor film as a mask, and the photo resist film is removed. Then, an impurity of the reverse conductivity type to that of the substrate is ion- implanted over the entire surface, resulting in the selective formation of impurity layers in a photoelectric conversion region 7 and a photo resistor region 8, respectively. Further, after the polycrystalline Si layer on the region 8 is covered with a photo resist film 9, the Si layer 5 is selectively removed by etching, and finally the films 9 and 6 are removed by etching. Thereafter, an interlayer insulation film 10 is formed, and a photo shielding Al is selectively formed. |
