| 摘要 |
PURPOSE:To enhance photosensitivity in all the visible light region and light response by using an amorphous material composed essentially of silicon and germanium contg. H and halogen for electrophotographic photoconductive member, etc. CONSTITUTION:The first photoconductive layer 102 contg. Si and Ge, and the second layer 103 contg. Si and O and having a free surface 106 are formed on the conductive substrate 101 to form a photoconductive member 100. C is incorporated in the first layer 102 in order to enhance photosensitivity and dark resistance, and further, adhesion between the substrate 101 and the layer 102. The second layer 103 is formed mainly in order to enhance humidity resistance, successive repeated use characteristics, high voltage resistance, use environment resistance, and durability. Since the first layer 102 and the second layer 103 have the common constituent element of Si, chemical stability can be obtained in the interface of both layers. |
