| 摘要 |
PURPOSE:To prevent the penetration of contamination from the side surfaces of wirings, and to prevent the step cut of the upper layer wirings in the case of multilayer wirings by a method wherein a CVD insulation film half or more as thick as the dimension of a wiring gap is formed and made to fill the wiring gaps, and the surface of the insulation film is made smooth. CONSTITUTION:An oxide film 12 is formed on the surface of an Si substrate 11, an electrode wiring 13 of Al or the like being formed on this oxide film with a line width 2mum, film thickness 1mum, and line gap 2mum, and the CVD insulation film 14 such as a double-layer film of a CVDSiO2 film or CVDSi3N4 film, or CVDSiO2 film and CVDSi3N4 film being formed on the surface of this wiring with a thickness of 1mum or more. Formation of the insulation film 14 through CVD with a thickness half or more of the wiring gap in such a manner enables the gaps to be filled with the insulation film and the surface of the insulation film to be formed nearly flat. |
