| 摘要 |
PURPOSE:To form an ion injection layer having the distortion distribution in the average depth direction and to realize a good bubble transfer characteristic by injecting a sort of ion by one accelerated energy. CONSTITUTION:After a thin layer consisting of gold, tungsten or chrome is formed to the thickness of >=1,500Angstrom on an magnetic garnet film, a mask pattern is formed on the thin layer, and a sort of ion is injected on the layer without changing the accelerated energy. Namely, after a gold film 2 with thickness 2,000Angstrom is formed by the deposition method on a magnetic garnet film monocrystal body 1, and a mask pattern 3 for forming the transfer line is formed by AZ1350J, a bubble transfer line is formed by injecting the helium ion (He<+>) at the accelerated energy 140kV and dose quantity 5.7X10<15>pc/cm<2>. |
