| 摘要 |
PURPOSE:To simplify the formation of an interlayer insulating film as well as to increase the yield of production of the titled device by a method wherein the second wiring layer is formed through the intermediary of a spacer layer consisting of an organic film, and after the spacer layer has been removed, the space generated is filled up by an inorganic interlayer insulating film. CONSTITUTION:An oxide film 21 is formed on a semiconductor substrate 20, and the first wiring layer 22 is formed. A spacer layer 23 consisting of an organic film is formed on the layer 23, and a through hole 24 leading to the first wiring layer 22 and another through hole 26 supporting the second wiring layer are formed on the spacer layer 23. Besides, the second wiring layer 25 is formed on the through holes 24 and 26. Then, the spacer layer 23 is removed by performing an oxygen-plasma and space is formed. At this time, the transformation of the second wiring layer 25 can be prevented by the formation of the through hole 26. Lastly, inorganic interlayer insulating films 28 and 29 consisting of the inorganic film such as a silicon nitride film and the like are formed on the inside and the surface of the space. As a film 29 which performs the function of a passivation film is formed, the workability and the yield of production of the titled device can be improved. |
