| 摘要 |
PURPOSE:To prevent oxidation, and to obviate adhesion on a wafer of a flake as a reaction product by temporarily heat-insulating a susceptor from a heater and keeping the susceptor at a low temperature within the range of a time constant when a thin-film is formed on a substrate with a material easy to be oxidized at a comparatively low temperature. CONSTITUTION:Heaters 10 are lowered by vertically movable mechanisms19, 20, and heat-insulating materials 17 among the heaters and susceptors 9, water- cooled pipes 25 and auxiliary heaters 26 are inserted by driving sections 21, 22 and the susceptors are kept at 100 deg.C or lower. A cover body 4 is kept at 70 deg.C or lower by a heater 10, a water-cooled pipe 3 and a temperature control section 24 at that time. The cover 4 is closed, the inside of a reaction chamber is purged with N2 for thirty min, the heat-insulating materials 17 inserted among the heaters 10 and the susceptors 9 and the water-cooled pipes 25 and the like are retreated to the left and the right by the driving sections 21, 22, and the heaters 17 are lifted and brought near to the susceptors 9 and the temperatures of the susceptors are elevated to a reaction temperature. Accordingly, the oxidation of a thin-film is prevented, and adhesion to a wafer of a reaction product can be obviated. |
