| 摘要 |
PURPOSE:To control an ion energy and distribution thereof, the distribution of electron temperature and the quantity and kinds of radicals by periodically modulating high-frequency voltage generating plasma. CONSTITUTION:In a plasma treater used for manufacturing a semiconductor device such as an electron cyclotron resonance type plasma treater, a signal from a standard signal generator 44 is modulated by an AM modulator 45 according to a signal from a modulating signal generator 46, and transmitted over a wave guide 48 through an amplifier 47. Modulated microwaves are introduced to the wave guide 48, and enter to a treating chamber 50. Magnetic-field generating coils 49, 51 are mounted around the treating chamber 50, and plasma is generated by the resonance of electrons by a magnetic field and microwaves. Accordingly, since electronic energy is related to the intensity of inputted microwaves, the distribution of electron temperature can be controlled by modulation, and the kinds and quantity of ion radicals generated with the control of the distribution of electron temperature can be controlled. |
