| 摘要 |
PURPOSE:To produce a semiconductor device of larger space with high reliability by a method wherein electrodes forming Schottky junctions are discontinuously formed. CONSTITUTION:An n<+> layer, an n layer and a p<+> layer are formed on a semiconductor substrate 1. A schottky electrodes 30 are discontinuously formed partially coming into contact with the n layer. Besides, these Schottky electrode 30 are short-circuited by an anode electrode 22 coming into ohmic contact with the n layer. When the anode electrode 22 and a cathode electrode 21 are respectively supplied with minus and plus potentials, the current flowing through an ohmic junction 200 may be reduced by a depletion layer of a Schottky junctions 300 to block the supplied voltage. When said electrodes are supplied with reverse potentials, they are made conductive. Through these procedures, a semiconductor of larger space with high reliability may be produced. |
