| 摘要 |
PURPOSE:To form electrodes onto a semiconductor element by few electrode materials by previously forming protruding electrodes onto other substrates and transferring the protruding electrodes at the positions of formation of the electrodes of the semiconductor element. CONSTITUTION:Protruding electrodes 24 made of gold are plated and formed on a substrate 21 by using a plating electrode 22 through another process. On the other hand, a semiconductor pellet 27 is sucked to a holder 25 and heated previously, and bonding pads 28 on the semiconductor pellet 27 are joined with the gold protruding electrodes 24 through thermocompression bonding. When a metal of combination in which bonding strength between the gold protruding electrodes 24 and the plating electrode 22 is low is used at that time, the electrodes 24 are transferred to the semiconductor pellet 27 side. The semiconductor pellet 27 to which the electrodes are transferred completely is connected to a lead for a film carrier. Accordingly, the consumption of gold as an electrode material is reduced, and the semiconductor pellet can be manufactured easily and stably. |
