发明名称 |
Negative working electron beam resist system to be dry-developed. |
摘要 |
<p>A process for producing a resist pattern by dry development using a resist comprising from 70 to 50% by weight of a novolac resin and from 30 to 50% by weight of a poly(ether pentene sulfone) is described.</p> |
申请公布号 |
EP0141311(A2) |
申请公布日期 |
1985.05.15 |
申请号 |
EP19840112183 |
申请日期 |
1984.10.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KAPLAN, LEON H.;KAPLAN, RICHARD DEAN |
分类号 |
H01L21/027;G03F7/038;G03F7/30;G03F7/36;(IPC1-7):G03F7/10 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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