发明名称 |
METHOD OF DRYING SEMICONDUCTOR SUBSTRATES AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES |
摘要 |
Substrates 4 are irradiated by electromagnetic waves emitted from an opening face 2 of a wave guide 3. An nonreactive atmosphere at normal atmospheric pressure is provided, for example through gas introduction and discharge pipes 6. The substrates 4 are positioned, in holder 5, so that their predominant faces are substantially at right angles to the opening face 2. |
申请公布号 |
DE3070491(D1) |
申请公布日期 |
1985.05.15 |
申请号 |
DE19803070491 |
申请日期 |
1980.12.23 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKAGI, MIKIO;KAMIOKA, HAJIME |
分类号 |
H01L21/304;F26B3/347;F26B21/14;G03F7/38;G03F7/40;H01L21/00;H01L21/68;(IPC1-7):G03F7/26;G03F7/16;F26B3/34 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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