发明名称 METHOD OF DRYING SEMICONDUCTOR SUBSTRATES AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES
摘要 Substrates 4 are irradiated by electromagnetic waves emitted from an opening face 2 of a wave guide 3. An nonreactive atmosphere at normal atmospheric pressure is provided, for example through gas introduction and discharge pipes 6. The substrates 4 are positioned, in holder 5, so that their predominant faces are substantially at right angles to the opening face 2.
申请公布号 DE3070491(D1) 申请公布日期 1985.05.15
申请号 DE19803070491 申请日期 1980.12.23
申请人 FUJITSU LIMITED 发明人 TAKAGI, MIKIO;KAMIOKA, HAJIME
分类号 H01L21/304;F26B3/347;F26B21/14;G03F7/38;G03F7/40;H01L21/00;H01L21/68;(IPC1-7):G03F7/26;G03F7/16;F26B3/34 主分类号 H01L21/304
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