| 摘要 |
<p>PURPOSE:To enable to prevent lowering of the accuracy of a mark without giving damage to the mark when an element isolation structure is formed by a method wherein a recess is provided at the prescribed position of a semiconductor substrate, and a positioning mark is provided at the recess above-mentioned. CONSTITUTION:An Si substrate 1 is composed of a base substrate 11 and the epitaxial layer 12 which is grown on the substrate 11. A recess, which will be turned to a mark forming region 21, is provided at the prescribed position of the layer 12 by performing a plasma etching using the reaction gas such as CCl4 and the like. Then, a positioning mark 22 is formed in the recess by performing a plasma etching in the same manner as above, and an SiO2 film 13 is grown by oxidizing the surface of the layer 12. Subsequently, an Si3N4 film 14 is grown on the whole surface by performing a vapor-phase growing method, the films 13 and 14 located in an aperture forming region are removed, and a V-shap groove 3 is formed by performing an anisotropic etching. Then, the wall face of the groove 3 is coated by an SiO2 film, a polycrystalline Si layer 4 is coated on the whole surface while the groove 3 is being filled up, the film 4 is left in the groove 3 only, the film 4 on the region other than the groove 13 is removed, and the remaining layer 4 is used as an interelement insulation isolation region.</p> |
