| 摘要 |
PURPOSE:To obtain the lead with which a highly accurate connection can be performed by a method wherein Sn or Au is coated on the copper foil wiring located on an insulating film, and through hole which is larger than a semiconductor pellet is provided facing the wiring. CONSTITUTION:A resist mask 4 is provided by coating a copper foil 3 on one side of a polyimide film 1, an electrolytic Au plating is performed using the copper foil 3 as a cathode, and an Au layer is formed. A resist mask 7 is provided on the other surface of the film 1, the film 1 is removed by performing an etching, and then a window 2 is formed by removing the unnecessary copper foil 3 by etching using the Au 6 as a mask. According to this constitution, no deflection in the copper foil is generated, the lead length are uniform, a metal lead having few bending can be obtained, and a complete connection can also be performed on the bump of a semiconductor element. |
