| 摘要 |
PURPOSE:To enable complete repair by few processes by placing a mask and a reticle on a sample stage, applying an organic film consisting of a photo-resist, etc., irradiating a fine region to be repaired with focussed charged particle beams while being scanned, changing the region into a carbon film and bringing the region to an opaque state when the mask or the reticle, in which a broken defect is generated, is repaired. CONSTITUTION:A metallic film 2 on which a mask pattern is to be formed is applied on a glass substrate 1, and a semiconductor wafer is exposed by using the metallic film 2. When a broken defect 3 is generated in the film 2 at that time, regions other than required are irradiated by beams, and the performance of an IC is deteriorated. Consequently, an organic film 4 consisting of a photo- resist, etc. is applied on the whole surface containing the defect 3, and placed on a stage not shown, the film 4 depositing on a defective section 3a is irradiated by charged particle beams 5 and the function of the film 4 is lost, and the film 4 depositing on the defective section 3a is brought to an opaque state to interrupt the transmission of ultraviolet rays and visible rays. Accordingly, time and trouble are conserved, and the metallic film 2 is completely repaired simply. |
