| 摘要 |
PURPOSE:To prevent the generation of short-circuit between a first and a second electrodes, both of which pinching a photoelectric conversion film between them, even though pinholes generate in the photoelectric conversion film by a method wherein, after the photoelectric conversion film was deposited, the first electrode on the substrate is anodized. CONSTITUTION:A first electrode 2 consisting of Si doped in high concentration is formed on an insulative substrate 1. An amorphous Si film 3, which is used as a photoelectric conversion film, is deposited. The electrode 2 is connected to the anode and an anodizing is performed in the dark. A second electrode 6 consisting of an InSn oxide film is formed on the film 3. As a result, no short-circuit generates between the electrodes 2 and 6 even though the second electrode 6 intrudes into pinholes and reaches the face of the electrode 2, because the pinhole generating sites in the film 3 and the electrode 2 in the vicinity thereof are converted into an insulating film. |
