发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To provide a metallized layer having a sufficient thickness as well as to simplify the dividing of an element by a method wherein, before performing a metallizing on the back side, a cut groove is provided on the back side of the wafer. CONSTITUTION:A thin film metal 4 is attached to the back side of a wafer and a cut groove 5 is formed. A thick metal layer 6 is formed utilizing said thin film 4. Then, when an element is divided by putting in a cleavage plane from the surface of an element, flaws and cracks are not generated on the element itself, thereby enabling to prevent the deterioration of characteristics of the element.</p>
申请公布号 JPS6085540(A) 申请公布日期 1985.05.15
申请号 JP19830193789 申请日期 1983.10.17
申请人 NIPPON DENKI KK 发明人 BETSUYAKU MASAHIKO
分类号 H01L21/301;H01L21/78;(IPC1-7):H01L21/78 主分类号 H01L21/301
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