| 摘要 |
PURPOSE:To expand the dynamic range of a voltage follower circuit and to set lower the operation power supply voltage by impressing a prescribed voltage not being zero V to a back gate of an MOS transistor (TR). CONSTITUTION:A base current is fed to a base of a parasitic bipolar TR T1 formed in constituting a CMOS circuit from a current source IB and a voltage VBE generated between the base and emitter of the TR T1 is given to the back gate of differential input MOS TRs Q1, Q2. Further, a parasitic diode D1 formed between a source region and a P-well region of TRs Q1, Q2 is not conducted because the source potential of the TRs Q1, Q2 is not brought to zero V completely. Thus, the dynamic range of the voltage follower circuit is expanded and the operating power supply voltage is set lower.
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