发明名称 IC ELEMENT AND MANUFACTURE THEREOF
摘要 PURPOSE:To enable high density mounting at low cost and the obtaining of high reliability by a method wherein the main body of the titled element is provided with projection electrodes and a gap holding member lower than the electrodes and having a higher melting point. CONSTITUTION:A Cr film 6 and a Cu film 7 are formed on the main body 1 of said element, and a photo resist 8 is applied over the entire surface; thereafter apertures 9 are provided at the parts of bump electrode formation. Next, a solder metal film 15 is risen at the parts by the method of electroplating. After the photo resist attached to the surface is removed, newly a photo resist 16 is applied, and an aperture 17 scheduled for the gap holding member is provided. Then, electroplating is performed again. With the bump electrode 15 and the gap holding member 18 as a mask, the extra films 6 and 7 on the main body are removed by etching. As a result, the electrode 15 and the member 18 are formed on the main body.
申请公布号 JPS6084884(A) 申请公布日期 1985.05.14
申请号 JP19830192729 申请日期 1983.10.15
申请人 MITSUBISHI DENKI KK 发明人 FUNADA ATSUSHI
分类号 H01L21/60;H01L29/861;(IPC1-7):H01L29/91 主分类号 H01L21/60
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