| 发明名称 |
Metallization process of a wafer back |
| 摘要 |
On the back of a wafer there are deposited firstly a gold layer and then an aluminium layer (eventually including a small silicon percent). It is finally carried out a thermic treatment at low temperature, which causes the aluminium migration towards the wafer through the gold layer.
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| 申请公布号 |
US4517226(A) |
申请公布日期 |
1985.05.14 |
| 申请号 |
US19830503255 |
申请日期 |
1983.06.10 |
| 申请人 |
SGS-ATES COMPONENTI ELETTRONICI S.P.A. |
发明人 |
BALDI, LIVIO;MAGGIS, ALDO |
| 分类号 |
H01L21/52;B23K35/00;H01L21/24;H01L21/285;H01L21/301;H01L21/58;(IPC1-7):B05D5/12 |
主分类号 |
H01L21/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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