| 摘要 |
PURPOSE:To realize a highly integrated CMOS.LSI by attaining the annealing technic using an electric oven which is capable of small re-distribution of implanted impurity ions, large activation and small junction leakage by performing a heat treatment with a low temperature within a specified range. CONSTITUTION:After forming gate electrodes on an Si substrate, BF2 and P are selectively implanted in P-channel regions and N-channel regions respectively by gate electrode self aligning ion implantation so as to form an amorphous layer. The shallow amorphous layer of about 0.2mum thick which is formed by implantation of BF2 or P ions is recrystallized by a heat treatment with 700 deg.C for about 30min and with 800 deg.C for about 1sec. As activation and reduction of a leakage current are carried out at the same time as the recrystallization of the amorphous layer, the heat treatment with 700-800 deg.C achieves the formation of good junctions. In addition, in case of the heat treatment with a temperature 800 deg.C or less, diffusion of P and B is small and diffusion due to re-distribution can be ignored so that a fine MOS.FET becomes possible. |
