| 摘要 |
PURPOSE:To enable to suppress the peripheral current component and to obtain the stabler negative resistance characteristic by a method wherein a remarkable difference in the concentration or a concentration gradient is formed to the impurity profile in an epitaxially grown Si semiconductor layer in a Schottky barrier diode. CONSTITUTION:After a thin insulation film 8 is formed on the surface of the epitaxial layer 4, an N<+> type high concentration semiconductor layer 6 is formed by implantation of N type impurity ions in the surface of the epitaxial layer via insulation film. It is possible to form the semiconductor layer 6 at the same time with a collector contact region or an emitter region. After this semiconductor layer is formed, a contact hole 9 of a smaller area than that of the surface of this semiconductor layer is bored in the thin insulation film covering its surface. Thereafter, an electrode material layer 9 for Schottky barrier diode is provided so as to come to junction with this semiconductor layer through this contact hole. |
