| 摘要 |
PURPOSE:To eliminate the disconnection at the step of the Al multilayer interconnection by a method wherein an Al electrode wiring is formed on an insulation substrate, and the second Al electrode wiring is formed via interlayer insulation film with a thickness of two or more layers of the first Al electrode wiring. CONSTITUTION:In a semiconductor IC, an oxide film 12 is formed on the surface of an Si substrate 11, and the first Al electrode wiring 13 is formed on this film 12 e.g. with a thickness of 0.5mum. Then, via interlayer insulation film 14, the second Al electrode wiring 15 is formed with a thickness of 1mum about twice as large as that of the first wiring. The increase of the thickness of the second wiring to twice or more of that of the first wiring in such a manner makes the thickness of the second wiring at the step larger than conventional and eliminates the generation of disconnection. |
