发明名称 Semiconductor integrated circuit including a fuse element
摘要 A semiconductor integrated circuit includes a transistor element, an insulating layer formed adjacent to the transistor, and a wiring connected to the transistor element at one end thereof and having a fuse as a part thereof. The wiring is made of monocrystalline silicon and formed on the insulating layer providing a substantially constant burn out current value for the fuse, and thus highly reliable operation of the circuit.
申请公布号 US4517583(A) 申请公布日期 1985.05.14
申请号 US19840657478 申请日期 1984.10.04
申请人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA 发明人 UCHIDA, YUKIMASA
分类号 G11C17/00;H01L21/331;H01L21/82;H01L21/8246;H01L23/525;H01L27/112;H01L29/73;(IPC1-7):H01L29/10;H01L21/86;H01L29/12;H01L29/76 主分类号 G11C17/00
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