发明名称 |
Semiconductor integrated circuit including a fuse element |
摘要 |
A semiconductor integrated circuit includes a transistor element, an insulating layer formed adjacent to the transistor, and a wiring connected to the transistor element at one end thereof and having a fuse as a part thereof. The wiring is made of monocrystalline silicon and formed on the insulating layer providing a substantially constant burn out current value for the fuse, and thus highly reliable operation of the circuit.
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申请公布号 |
US4517583(A) |
申请公布日期 |
1985.05.14 |
申请号 |
US19840657478 |
申请日期 |
1984.10.04 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
UCHIDA, YUKIMASA |
分类号 |
G11C17/00;H01L21/331;H01L21/82;H01L21/8246;H01L23/525;H01L27/112;H01L29/73;(IPC1-7):H01L29/10;H01L21/86;H01L29/12;H01L29/76 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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