| 摘要 |
PURPOSE:To enable composition of high-resistance SiC as an insulating film or a protective film and to prevent generation of a crystal defect by thermal expansion coefficient of that and further to enable thickening of the film by implanting BeO, BN or the like in the SiC formed in advance by ion implantation method. CONSTITUTION:A low-resistance SiC polycrystalline film 2a formed on a main surface of an Si single crystal substrate 1 by ion implantation is doped with BeO so as to make the film insulating, i.e. high-resistance. For the ion implantation, a solid source of BeO as an ion source is used or a solid surce of Be and a gas source of O are used together to perform a heat treatment. Next, after the SiC film 2 is selectively removed by etching, impurity such as arsenic is doped in the main surface of the exposed Si substrate 1 to form a buried layer 3, on which an epitaxial layer 4 is formed and n and p type impurities are selectively diffused. As thermal expansion coefficients of the high-resistance SiC film 2 and the Si substrate 1 are equal, stress is not generated in the Si single crystal even if the SiC films 2 and 6 are formed to be thick. |
