发明名称 Method for constructing delay circuits in a master slice IC
摘要 A method for constructing delay circuits in a master slice IC formed on a semiconductor substrate. The master slice IC comprises regularly arranged MIS transistors having gate electrodes. The MIS transistors includes various logic circuits. A delay circuit is formed between two logic circuits. The delay circuit comprises a resistor and a capacitor. The resistor is constructed using the resistances of the gate electrodes by sequentially connecting the gate electrodes between two logic circuits. The capacitor is constructed using capacitances formed between the gate electrodes and the semiconductor substrate. A precise delay time of a delay circuit having a small area can be obtained.
申请公布号 US4516312(A) 申请公布日期 1985.05.14
申请号 US19820347464 申请日期 1982.02.10
申请人 FUJITSU LIMITED 发明人 TOMITA, MASAYOSHI
分类号 H03K5/13;H01L27/092;H01L27/118;H03H7/30;H03H11/26;H03K19/0175;(IPC1-7):H01L29/78 主分类号 H03K5/13
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