发明名称 |
FORMATION OF OXIDE LAYER |
摘要 |
PURPOSE:To form a conductive oxide layer having excellent film strength on the surface of a substrate at low cost by preheating the surface of the light transmissive substrate, cleaning the surface with electric discharge, and introducing the substrate into a vapor deposition chamber wherein the substrate is brought into contact with activated gaseous oxygen and oxide vapor. CONSTITUTION:A transparent film 1 of polyethylene terephthalate is supplied from a supply roll 13 into a chamber 3 wherein the film is preheated to about 60 deg.C with a heater lamp 24 and the surface is cleaned by an electric discharge device 25. Then the film is introduced into a vapor deposition chamber 31. A transparent conductive film of In2O3 and SnO2 is formed on the surface of the transparent film 1 in the chamber 31 with an evaporation source 22 of an In-Sn alloy or of In2O3 and SnO2 and gaseous oxygen ionized or activated by a discharge device 11 while heating the film with a halogen heater 20. Then the film is introduced into a chamber 32 wherein the transparency and the electric resistance of the transparent conductive film are measured by a light transmission sensor 18 and a resistance measuring device 17. The measured values are fed back to the vapor depositing conditions at the preceding stage to control the transparency and conductivity of the vapor deposited film to a desired value. |
申请公布号 |
JPS6082660(A) |
申请公布日期 |
1985.05.10 |
申请号 |
JP19830188836 |
申请日期 |
1983.10.08 |
申请人 |
KONISHIROKU SHASHIN KOGYO KK |
发明人 |
OOTA TATSUO;KOMATSU KATSUAKI |
分类号 |
C23C14/08;C08J7/06;C23C14/00;C23C14/24;C23C14/56;H01B13/00 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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