| 摘要 |
PURPOSE:To form inexpensively a silicon carbide film on a substrate by subjecting a carbonaceous compd. such as CH4 and a silicon compd. such as SiCl4 which is introduced along with a carrier gas to a gaseous phase reaction by the energy such as plasma. CONSTITUTION:A carrier gas such as H2 from a bomb 1 is passed through liquid SiCl4, SiBr4, SiI4, etc. in a water bath 7 to evaporate the liquid, and spouted from an opening of an electrode 10 into a vacuum vessel 20 along with CH4, C2H6, C2H4, C2H2, etc. from a bomb 2. In this case, a doping gas such as B2H6 from a bomb 3 is added at need. The inside of said vacuum vessel 20 is evacuated to appropriate pressure with a diffusion pump 16, a mechanical booster pump, rotary oil pumps 17a and 17b, etc., and a substrate 12 attached to an electrode 11 is heated to a suitable temp. by a heater 13 and rotated by a rotary motor 14. Under said conditions, plasma is discharged between both electrodes 10 and 11 with a high-frequency electric power source 15, and CH4, etc. and SiCl4, etc. are subjected to a gaseous phase reaction to form an SiC film on the substrate 12. |
