| 摘要 |
PURPOSE:To obtain a MOS dynamic memory cell having high alpha-ray resistance by forming a semiconductor or insulator layer in band width wider than a substrate semiconductor where deeper than a high impurity-concentration region in a semiconductor substrate in a memory region. CONSTITUTION:A wide-band semiconductor or insulator layer 8 having band width of E'c-E'v larger than the band width Ec-Ev of substrate silicon is shaped to the lower section of a P<+> layer 4. Holes (h) as minority carriers generated through alpha-ray irradiation to a substrate 1 are collected to a potential indentation shaped by the wide-band semiconductor or insulator layer 8 and the substrate 1, but they are interrupted by high potential walls A', B', and can intrude to an N<+> layer 3 even when their concentration is increased and energy distribution is widened. Accordingly, an extremely excellent high alpha-ray resistance element is manufactured. |
