| 摘要 |
PURPOSE:To obtain a titled material having excellent heat resistance with a simple process by depositing a nonsingle crystal thin film substrate insulating material on a substrate with a CVD method, etc., and controlling the carbon content in the thin film to an appropriate value. CONSTITUTION:In a solar cell which is constituted of a substrate 1, a nonsingle crystal thin film substrate insulating material 2, a metallic thin film electrode 3, etc., said substrate insulating material 2 is deposited and formed on the substrate 1 by a plasma CVD method or a spattering method. The carbon content in the thin film is regulated to >=10atom%, or preferably to >=30%. The dielectric breakdown voltage of said substrate insulating material is regulated to >=50V or preferably to >=100V, and the thickness to 0.5-100mum, or preferably to 1-10mum. And the insulating material is constituted of a substance shown by the general formula a-Si(1-x-y)CxXy (where X is >=1 kind among N, O, F, Cl, Br, and Ge, and 1>=x>=0.1, 0.9>=y>=0, and 1>=x+y>=0.1) to relieve the stress in the thin film and to provide structural softness. |
