| 摘要 |
PURPOSE:To form a mixed thin film of controlled optional composition by opposing sputtering targets alternately to a substrate, and depositing target materials alternately on the substrate while controlling the amt. to be deposited. CONSTITUTION:A substrate 1 on which a mixed thin film is to be formed is fixed to a revolving supporting body 2 in a vacuum chamber (not shown in the figure), and a target 3 such as Si and a target 4 such as Ge are alternately opposed to the substrate 1. The pressure in the vacuum chamber is reduced in an atmosphere contg. O2. In addition, a thickness detector 6 such as an ellipsometer is arranged between the targets 3 and 4, and the detected thickness is fed back to the electric power source of each target to control a sputtering electric current and to sputter alternately Si and Ge. The thin film of (Si, Ge)O having desired composition can be formed on the substrate 1 in this way. |
