| 摘要 |
PURPOSE:To enable to effectively extinguish an auxiliary thyristor by enabling to apply sufficient reverse voltage to a P-N junction region of the amplifying gate of a photodrive self-extinguishing type thyristor. CONSTITUTION:An electrode 22 is provided on the surface of a semiconductor region 10 near a photoreceptor 21 of an auxiliary thyristor 1, an electrode 31 for electrically bonding a region 7 and a region 11 is provided, and the electrodes 31 and the electrode 22 are coupled via a diode 24. At the extinguishing time, a positive voltage is applied to an electrode 5, a negative voltage is applied to an electrode 31, a voltage is produced at the diode 24 by a current of a circuit of the electrode 5, the region 9, the region 7, the diode 24 and the electrode 31, and a reverse bias is applied to the junction 11. Therefore, the exhaust of carrier 32 is advanced similarly to the main thyristor 2, and the thyristor can be effectively extinguished. |
