| 摘要 |
1530094 Integrated information store SIEMENS AG 11 Feb 1977 [4 May 1976] 5813/77 Heading H1K An information store comprises a heavily doped semiconductor substrate SU (Fig. 4) of one conductivity type carrying a lightly doped epitaxial layer of the same type, a buried layer of opposite type disposed beneath the epitaxial layer and a further layer of said opposite type located in the epitaxial layer surface above the buried layer, a V-groove extending from the surface to divide the surface and buried layers into zones BL1, BL2 and BU1, BU2 respectively and a conductive track WL extending in the groove but insulated from its walls. As described each pair of zones BL, BU defines the ends of the channel of an IGFET whose gate is formed by the track WL (of polysilicon or metal), each IGFET thus being in series with a storage capacitor formed by the PN junction between the respective zone BU and the substrate. The zones BL form part of respective bit lines running normal to word lines WL whereas the zones BU form isolated islands. |
