| 摘要 |
PURPOSE:To synthesize efficiently a single crystal by a flux method by changing the rate of opening in a partition plate for a base material in accordance with the growth of a crystal. CONSTITUTION:Oxide, fluoride, etc. are used as a flux, and other oxide, fluoride, etc. contained in the flux components are deposited by a temp. difference method or a slow cooling method to synthesize a single crystal. In this method, a shielding plate is put between a crystal growing part and a base material part, and the rate of opening in the shielding plate is changed in accordance with the growth of a crystal. In order to change the rate of opening in the partition plate present in the flux heated to about 1,000 deg.C, for example, several partition plates 5 are put with each spacer 6 in-between, and the plates 5 are successively pulled up in accordance with the growth of a crystal. At this time, the rate of opening is intermittently changed at a high rate, yet the operaton is simple. |
