| 摘要 |
PURPOSE:To form a superior photoconductive film by using amorphous Si-C for the outermost layer, and amorphous Si-Ge for the internal layer. CONSTITUTION:The amorphous silicon-carbon-germanium (a-Si-C-Ge) type material contg. a large amt. of H can be greatly change in conduction type and electric resistivity by doping and control of production conditions, and can be changed in band gap by changing the compsn. of a-Si-C-Ge, and since it has the following 3 characteristics: Hetero junction can be easily formed, it has strong covalent bond, and it has high friction resistance, a film structure having hetero junction using this material, thus permitting the obtained photoconductive film to have photosensitivity up to long wavelength of 770nm, and superior friction resistance. |
