发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable wiring layers to be formed with a higher density by forming a contact hole for connecting a upper and a lower layers in the multi-layered wiring layers provided on a substrate into a polygonal shape. CONSTITUTION:A lower wiring layer 22 is connected to an upper wiring layer 23 by providing an octagonal contact hole 21, for example. If each side of a square contact hole is (a), the length between the center and the corner of the square hole will be 2<1/2>X(a). In case of an octagonal contact hole, however, the relevant length is approximately (a). So, the distance between the points connected with the wiring layers is reduced by 2X[2<1/2>X(a)-(a)], whereby the density of the wiring layers becomes the higher by that much.
申请公布号 JPS6081841(A) 申请公布日期 1985.05.09
申请号 JP19830191186 申请日期 1983.10.12
申请人 FUJITSU KK 发明人 TAKAYAMA YOSHIHISA;TANABE TOMOAKI
分类号 H01L23/522;H01L21/768;H01L29/41 主分类号 H01L23/522
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