| 摘要 |
PURPOSE:To reduce the contacting resistance of an electrode and to prevent the penetration of aluminum which causes the characteristics from decreasing or deteriorating by covering with an aluminum layer including silicon through a polycrystalline silicon layer, thereby forming the electrode. CONSTITUTION:Electrode contacting windows 3c, 3b, 3e are opened at an insulating layer 3 made of SiO2 or the like on a silicon substrate 1, a polycrystalline Si layer 6 of high purity is formed, an Al-Si layer 7 is sintered by sputtering, selectively etched to form collector, base and emitter electrodes 5c, 5b, 5e. Aluminum atoms in the layer 7 are diffused in the layer 6 of the lower layer, and the electrodes are contacted preferably via low resistance with the substrate 1. The Si with respect to the entire aluminum with the layer 6 is preferably 3.5-5.5wt%. If less than 3.5wt%, the penetration of the aluminum into the emitter region 2e occurs. |
