| 摘要 |
PURPOSE:To reduce the deterioration of n-value by forming a Schottky electrode of a metal which contains at least one of elements for forming a compound semiconductor. CONSTITUTION:A migration is suppressed by containing at least one of elements for forming a compound semiconductor previously in the metal for forming a Schottky electrode such as Mo, Ti, Al, Au, Pt, W and Ta. In case of GaAs MESFET, when 1-20% of Ga is contained in Al to form the Schottky electrode, the migration of the Al into GaAs is suppressed, n-value exhibits preferable value, and the n-value and the barrier height do not vary even in the heat treatment. |
