| 摘要 |
PURPOSE:To obtain stable and preferable Schottky n-value by forming a Schottky type electrode between Al or Au and a compound semiconductor through a specific metal layer. CONSTITUTION:A metal layer of at least one of Ta, W, Pt, Mo which has relatively high specific resistance and relatively hard progress of migration is formed between Al or Au optimum as a Schottky electrode metal and a compound semiconductor, thereby preventing the Al or Au from migrating into the compound semiconductor. In case of GaAsMESFET, when the Schottky electrode is constructed by forming the Al on Ta, the Ta layer prevents the Al from migrating into GaAs to become a barrier metal layer, the n-value exhibits preferable 1.1-1.3, and the n-value and the barrier height do not vary even in the heat treatment. |
