发明名称 |
APERTURE DIAPHRAGM AND ITS MANUFACTURING METHOD |
摘要 |
PURPOSE:To obtain an aperture diaphragm with high dimensional accuracy by providing a silicon nitride film on a semiconductor single crystal substrate with an opening and then a pattern made of metal film that specifies the opening of the aperture diaphragm on it. CONSTITUTION:A silicon nitride film 2 is formed on one surface of a silicon single crystal substrate 1 and the silicon nitride film that corresponds to the opening section of an aperture diaphragm is etched and removed. A silicon nitride film 3 is formed on the other surface and a Ti thin film 4 and an Au thin film 5 are formed sequentially on it. A pattern that has a complimentary relationship is formed on the Au thin film 5 using a resist 6 and an electron beam absorption layer 7 is formed by Au-plating it and then the resist 6 is removed. After the Au thin film 5 and the Ti thin film 4 for the opening section of the electron beam absorption layer 7 are removed by the ion etching method until the silicon nitride film 3 is exposed, the exposure section of the silicon single crystal substrate 1 is anisotropically etched using the silicon nitride film 2 as a protective mask. Subsequently, the silicon nitride film 3 is etched and removed. |
申请公布号 |
JPS6081750(A) |
申请公布日期 |
1985.05.09 |
申请号 |
JP19830189526 |
申请日期 |
1983.10.11 |
申请人 |
NIPPON DENKI KK |
发明人 |
HONDA TOSHIYUKI;IIDA YASUO |
分类号 |
H01J37/09;H01J37/305;H01L21/027 |
主分类号 |
H01J37/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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