| 摘要 |
PURPOSE:To simplify a manufacturing process in a large degree by a method wherein, after an open window is formed in a photoresist by patterning, a coating material is applied again so as to taper moderately the stepped portion of the open window, and then nonselective plasma etching is conducted. CONSTITUTION:An insulating film 12 is formed on a substrate 11, a photoresist 13 is applied thereon, and an open window 14 is formed by patterning. Next, a photoresist 15 is applied to fill the opening window so that the stepped portion of the opening window 14 be formed in a moderately tapered shape. Subsequently, nonselective plasma etching 17 is applied to the photoresists 15, 13 and the insulating film 12 to etch the portion of the insulating film 12 in an open window 16 of the photoresist 15 while the open window 16 and the tapered shape thereof are left as they are, and thereby a tapered open window 18 is formed. Lastly the photoresist 13 is removed, and thus the formation of the moderately tapered open window 18 is completed. |
