| 摘要 |
PURPOSE:To make it possible to form a groove part more simply in the surface of a semiconductor substrate, by forming a region, which becomes the bottom part of the groove and wherein epitaxial growing is not grown, at a part of the surface of the semiconductor substrate, and growing an epitaxial layer at both neighboring sides of said region on the surface of the semiconductor substrate. CONSTITUTION:On the main surface of a silicon substrate 1, a silicon oxide film 2 is formed by a thermal diffusion method. The silicon oxide film 2 other than a part, which is to become a groove part 4, is removed by using photoetching technology. Then, a single crystal silicon epitaxial layer 3 is grown on the exposed silicon substrate 1 by silicon vapor phase epitaxial technology. Said growing comprises the growing upward to the silicon substrate 1 and the growing in the lateral direction on the upper part of the silicon oxide film 2, which is made to remain beforehand. The width and the epitaxial growing time of the silicon oxide film 2, which is made to remain by the photoetching technology, are appropriately set. Thus, the groove part 4 having arbitrary width and depth can be formed. Thereafter, a silicon oxide film 6 is formed by, e.g., a thermal oxidation method, and polysilicon is buried in the groove 4. |
