| 摘要 |
PURPOSE:To facilitate breakdown by a method wherein and Al electrode is directly installed to the contact of a junction to be put in breakdown without the deposit of silicide in integrating a plurality of semiconductor elements writing by junction breakdown and a plurality of semiconductor elements to form the peripheral circuit on the same semiconductor substrate. CONSTITUTION:When the writing semiconductor elements and the semiconductor elements to form the peripheral circuit are provided on the same semiconductor substrate, the writing element is made as a bi-polar transistor of vertical structure, the structure of which is made as follows: a collector junction 3 of one conductivity type is provided with a base junction 2 of reverse conductivity type, where an emitter junction 1 to be put in junction breakdown is formed. Next, Al electrodes 9 are installed to the junction 1 and 2 via apertures opened in an SiO2 film 4 covering the whole, respectively. At this time, a silicide 8 such as Pt is interposed under the electrode in the junction 2, whereas the electrode is directly installed to the junction 1 without its interposal. |
