| 摘要 |
<p>PURPOSE:To obtain a high-energy beam-sensitive material having high sensitivity and resolution to high-energy beams and high dry etching resistance by using a pattern forming material contg. a specified siloxane polymer. CONSTITUTION:A high-energy beam-sensitive material contg. a siloxane polymer represented by formula I [where R is H, alkyl or phenyl, X is Cl, Br, I or -CH2Y (Y is Cl, Br or I), each of k, l and m is 0 or a positive integer, and n is a positive integer, but l and k are not simultaneously zero] is used as a pattern forming material. For example, a siloxane polymer represented by formula II [where X1 is OH, acryloyloxy or -CH2Y (Y is acryloyloxy, methacryloyloxy or the like)] is contained in combination with a cross-linking agent and a sensitizer. A multifunctional acrylic compound or the like is used as the cross-linking agent, and an aromatic carbonyl compound or the like is used as the sensitizer. The high-energy beam-sensitive material can accurately reproduce a negative pattern and has high dry etching resistance. It is used in the manufacture of a semiconductor element or the like.</p> |
