| 摘要 |
PURPOSE:To obtain an island region, in the periphery thereof there is no bird beak, by a method wherein a thick insulating film is applied on the surface of a semiconductor substrate, an annularly projecting insulating film is left through partial removal by etching, a semiconductor layer is deposited on the whole surface containing the insulating film, the surface is flattened, and the island region surrounded by a projection is formed. CONSTITUTION:An N<+> type buried region 9 and a shallow P<+> type region 7 positioned at the fringe of the region 9 are each diffused and formed to the surface layer section of a P type Si substrate 1, and a thick SiO2 film 10 is deposited on the whole surface containing the regions 7, 9 through vapor phase chemical growth. A mask 11 consisting of an Si3N4 film is shaped on the film 10 while being made to correspond to the region 7, and the exposed section of the film 10 is removed through etching to leave an annularly projecting film 10a only under the mask 11. An N<-> type layer 12 is grown on the whole surface containing the film 10a in an epitaxial manner, the thickness of the layer 12 is thinned through etching until the surface of the film 10a is exposed, and the insular layer 12, which is surrounded by the film 10a connected to the region 7 and the surface thereof is flattened, is obtained. |
