| 摘要 |
PURPOSE:To make it possible to form a resistor elements having different resistivities stably at a high density on a semiconductor element, by determining the shapes and forming positions of all resistance regions by the patterning of a first mask material. CONSTITUTION:A silicon oxide film 102 is formed on an N-type semiconductor substrate 101. An aluminum film 103 is deposited as a first mask material on the entire surface. Then, the aluminum film 103 on a resistance-element forming region is selectively removed by a photoetching method. Thus opening parts 104 and 105 are formed. Then, as a second mask material, photoresist 106 is formed. Thereafter, boron ions are implanted, and a first resistance element region 107 is formed. Then, as a third mask material, photoresist 108 is formed. Boron, whose dose amount is different from the first ion implantation, is implanted and a second resistance element region 109 is formed. Thus the interval between the resistors having different resistivities can be controlled accurately. |
