| 摘要 |
PURPOSE:To prevent generation of projections produced on a wiring metal by forming a sandwich construction of a semiconductor substrate-metallic oxide by coating the first metallic film with the second metallic oxide film. CONSTITUTION:A patterned Al film 22 is formed on a substrate 21. Then a metal which is oxidized wholly at a lower temperature than that for oxidizing Al which composes the film 22, e.g. Ta 23 is spreaded over the whole surface of the substrate 21 by spattering. When it is oxidized, Ta changes into Ta2O5 24. This film 24 functions so as to prevent generation of projections. In addition, window opening of the film 24 can be done by the same etching as of a PSG film as a cover at a time and there is no trouble in later processes. Also for Ta, a DC magnetron spattering device offering a large coating rate can be used similarly in the case for Al and it is suitable for mass-production processes. |
