| 摘要 |
An improved semiconductor die bonding structure and method for electrical devices is described which utilizes a ductile foil between the semiconductor die and the base of the device package. The die is sealed to the foil with a die bonding material formed from a titania free base glass to which has been added 23.6 to 36.4 weight percent lead titanate powder to give a glass plus ceramic mixture consisting essentially of (by weight percent) 2.5-10.7% GeO2, 0-2.3% SiO2, 58.6-78.5% PbO, 0-5.3% PbF2, 7-13% B2O3, 2.5-6.9% Al2O3, 0-5.3% ZnO, 0.4-2.3% V2O5, 0-5.3% CdO, and 6.2-9.6% TiO2. The ductile foil is bonded to the ceramic package base directly without intermediate layers or alternatively by means of an improved foil bonding glass material consisting essentially of (by weight percent) 10-15% SiO2, 45-55% PbO, 8-12% ZnO, 2-5% Al2O3, and 25-30% B2O3.
|
