| 摘要 |
PURPOSE:To prevent leakage currents, and to hold and read a memory signal by forming the shape of a storage capacitance section containing a recessed section in a semiconductor memory to a V shape. CONSTITUTION:Field SiO220 and a channel cut layer 21 are formed to an Si substrate 8 using (100) as a main surface, and an Si etching mask 23 to which recessed-section forming regions 22 are bored is shaped. Si is reactive-sputtering etched by a chloride gas to form V-shaped recessed sections 24. The mask 23 is removed, and a capacitor insulating film 25 and a plate electrode 26 are formed, thus completing recessed type capacitors. Since a distance between the capacitors in sections deeper than rectangular capacitors can be increased in the V-shaped recessed type capacitors formed in this manner, the approach and superposition of depletion layers 28 can be reduced, and leakage currents can be minimized. |
